Published May 31, 2006 | Version v1
Journal article

Effects of Al doping concentration on optical parameters of ZnO:Al thin films by sol-gel technique

  • 1. International Center for Material Physics, Chinese Academy of Sciences, Shengyang 110015 (China)
  • 2. Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054 (China)
  • 3. Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054 (China) and Department of Physics, Zhanjiang Normal College, Zhanjiang 524048 (China)
  • 4. Laser Fusion Research Center, China Academy of Engineering Physics, Mianyang 621900 (China)

Description

ZnO:Al thin films doped with different aluminum concentration were deposited on (0 0 0 1) sapphire substrates by sol-gel technique. Kramers-Kronig relationship was used to determine the optical parameters of ZnO:Al thin films in wavelengths with a range of 300-600 nm. Calculated results show that all optical parameters keep constant in the visible region. The refractive index, the extinction coefficient and the real and imaginary components of dielectric are ∼1.6, ∼0.08, ∼2.5, and ∼0.27, respectively. Optical constants change distinctly near the optical absorption edge. In the ultraviolet region, doping concentration strongly affects the optical parameters of ZnO:Al thin films. Optical parameters tend to decrease with increasing doping concentration

Additional details

Identifiers

DOI
10.1016/j.physb.2006.01.342;
PII
S0921-4526(06)00201-8;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
381
Journal Issue
1-2
Journal Page Range
p. 209-213
ISSN
0921-4526
CODEN
PHYBE3

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.