Published February 1976 | Version v1
Journal article Metadata-only

Use of GaSe semiconductor detectors for monitoring high energy muon beams

Creators

  • 1. Univ., Bari, Italy

Description

GaSe semiconductor detectors have been successfully tested during one year for monitoring muon beams in the GeV range in the neutrino experiment at CERN. Their performances are comparable with those of commercial Si surface barrier detectors for this particular application. Crystal growth, detector fabrication and characterization are briefly described. Various advantages (cost, ruggedness, resistance to radiation damage, manufacturing simplicity, etc.) are discussed

Additional details

Identifiers

DOI
10.1109/tns.1976.4328236;

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
23
Journal Issue
1
Series
IEEE Trans. Nucl. Sci.
Journal Page Range
189-197
ISSN
0018-9499

Conference

Title
22. nuclear science symposium and 7. nuclear power systems symposium.
Dates
19 Nov 1975.
Place
San Francisco, CA, USA.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
7261263
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S43: PARTICLE ACCELERATORS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BEAM MONITORING; COST; CRYSTAL GROWTH; FABRICATION; GALLIUM ALLOYS; MUON BEAMS; MUON DETECTION; PERFORMANCE TESTING; SELENIUM ALLOYS; SEMICONDUCTOR DETECTORS; STABILITY
Descriptors DEC
ALLOYS; BEAMS; CHARGED PARTICLE DETECTION; LEPTON BEAMS; MEASURING INSTRUMENTS; MONITORING; PARTICLE BEAMS; RADIATION DETECTION; RADIATION DETECTORS; TESTING

Optional Information

Notes
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