Published September 1986
| Version v1
Journal article
The residual microstructure of ion-implanted semi-insulating GaAs
Creators
- 1. Surrey Univ., Guildford (UK). Dept. of Electronic and Electrical Engineering
Description
Transmission electron microscopy has been used to study Be+ ion implantation following encapsulation and transient annealing of GaAs. The Be+ implanted GaAs stays crystalline and contains faulted and unfaulted loops. Deposition of CVD Si3N4 at 6350C does not change the defect density significantly. A 30 s anneal at 9000C removes the faulted loops and crystallinity is improved. Precipitates which may be due to beryllium are formed during this anneal. (author)
Additional details
Publishing Information
- Journal Title
- Radiat. Eff.
- Journal Volume
- 97
- Journal Issue
- 3-4
- Series
- Radiat. Eff.
- Journal Page Range
- 307-312
- ISSN
- 0033-7579
- CODEN
- RAEFB
Conference
- Title
- 3. international conference on radiation effects in insulators.
- Dates
- 15-19 Jul 1985.
- Place
- Guildford (UK).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 18033832
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; BERYLLIUM IONS; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DEPOSITION; ENCAPSULATION; GALLIUM ARSENIDES; HIGH TEMPERATURE; ION BEAMS; ION IMPLANTATION; MICROSTRUCTURE; PRECIPITATION; SILICON NITRIDES; TRANSMISSION ELECTRON MICROSCO
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; BEAMS; CHARGED PARTICLES; CHEMICAL COATING; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; SEPARATION PROCESSES; SILICON COMPOUNDS; SURFACE COATING