Published July 25, 2005
| Version v1
Journal article
Light-induced defect creation in hydrogenated polymorphous silicon
- 1. Department of Electrical and Digital-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku, Hiroshima 731-5193 (Japan)
- 2. Electro-Chemical and Cancer Institute, Kokuryo, Chofu, Tokyo 182-0022 (Japan)
- 3. Physics Laboratory, Meikai University, Urayasu, Chiba 279-8550 (Japan)
- 4. Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Palaiseau Cedex 91128 (France)
Description
Light-induced defect creation in hydrogenated polymorphous silicon (pm-Si:H) is investigated from electron spin resonance measurements and is compared with that in hydrogenated amorphous silicon (a-Si:H). Light-induced defect creation occurs at room temperature similarly for both types of films prepared at 250 deg. C. Thermal annealing of light-induced defects is also investigated as a function of temperature. Different behaviours of annealing characteristics for pm-Si:H from those for a-Si:H are observed and discussed. In particular, we observed a decrease of the light-induced defect creation efficiency with repeated light-soaking-annealing cycles and discuss it with respect to the hydrogen bonding in pm-Si:H films
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2005.02.064;
- PII
- S0921-5107(05)00176-5;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 121
- Journal Issue
- 1-2
- Journal Page Range
- p. 34-41
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37120466
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; EFFICIENCY; ELECTRON SPIN RESONANCE; FILMS; SEMICONDUCTOR MATERIALS; SILICON; TEMPERATURE DEPENDENCE; VISIBLE RADIATION
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; MAGNETIC RESONANCE; MATERIALS; RADIATIONS; RESONANCE; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.