Published May 15, 1993
| Version v1
Journal article
Electron-spin polarization in photoemission from thin AlxGa1-xAs
- 1. Stanford Linear Accelerator Center, Stanford University, Stanford, California 94309 (United States)
- 2. Department of Physics, University of Wisconsin, Madison, Wisconsin 53706 (United States)
- 3. Department of Electrical Engineering and Computer Sciences, and The Electronics Research Laboratory, University of California, Berkeley, California 94720 (United States)
Description
The polarization of photoemitted electrons from thin AlxGa1-xAs layers grown by molecular-beam epitaxy has been studied as a function of Al concentration by varying x in steps of 0.05 from 0.0 to 0.15. As the fraction x is increased, the wavelength dependence of the polarization shifts toward shorter wavelengths, permitting wavelength tuning of the region of maximum polarization. A maximum electron polarization of 42%--43% is obtained for AlxGa1-xAs samples with x≥0.05 while the maximum polarization of GaAs (x=0) samples reaches 49%. To investigate the lower polarization of AlxGa1-xAs, additional samples have been studied, including a short-period superlattice (GaAs)7 - (AlAs)1
Additional details
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 73
- Journal Issue
- 10
- Journal Page Range
- p. 5189-5192.
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 24053180
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM ARSENIDES; ELECTRON SOURCES; EPITAXY; GALLIUM ARSENIDES; PHOTOEMISSION; POLARIZATION; TERNARY ALLOY SYSTEMS
- Descriptors DEC
- ALLOY SYSTEMS; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EMISSION; GALLIUM COMPOUNDS; PARTICLE SOURCES; PNICTIDES; RADIATION SOURCES; SECONDARY EMISSION