Published April 12, 1998
| Version v1
Journal article
Features of epitaxial layers GaAs as α-detectors
- 1. Fiziko-Tekhnicheskij Inst. im. A. F. Ioffe RAN, Sankt-Peterburg (Russian Federation)
Description
Properties of p+ - n structures on the basis of epitaxial layers GaAs used as light ion (α-particle) detectors are considered. Performances of GaAs detectors are compared with recent literature data on potentialities of modern semi-insulating SI-GaAs structures. It is noted that epitaxial layers have less impurities and structure defects generating the deep levels in the forbidden zone
Additional details
Additional titles
- Original title (Russian)
- Osobennosti ehpitaksial'nykh sloev GaAs kak detektorov α-chastits
Publishing Information
- Journal Title
- Pis'ma v Zhurnal Tekhnicheskoj Fiziki
- Journal Volume
- 24
- Journal Issue
- 7
- Journal Page Range
- p. 8-15
- ISSN
- 0320-0116
- CODEN
- PZTFDD
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 30049967
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ALPHA DETECTION; ENERGY LEVELS; EPITAXY; GALLIUM ARSENIDES; PERFORMANCE; SEMICONDUCTOR DETECTORS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLE DETECTION; CRYSTAL GROWTH METHODS; DETECTION; GALLIUM COMPOUNDS; MEASURING INSTRUMENTS; PNICTIDES; RADIATION DETECTION; RADIATION DETECTORS
Optional Information
- Notes
- 11 refs., 2 figs.