Fabrication of n++GaAs-Nb contacts and their electrophysical properties at low temperatures

The work is aimed at investigating electrophysical properties of n++GaAs-Nb contacts produced under vacuum fracture using standard technological processes of GaAs surface purification from oxides prior to niobium film application at low temperatures. It is shown that n++GaAs-Nb contact produced possesses electrophysical properties corresponding to semiconductor - Schottky barrier - superconductor contact under niobium transition to superconducting state. The technology developed can be used to produce superconducting tunnel structures with a semiconducting barrier. 10 refs.; 3 figs