Published June 1991
| Version v1
Journal article
Features of concentration profiles of nitrogen atoms implanted into silicon under conditions of thermocycling
Description
Short note
Additional details
Additional titles
- Original title (Russian)
- Особенности профилей концентрации атомов азота, имплантированного в кремний в условиях термоциклирования
Publishing Information
- Journal Title
- Poverkhnost': Fizika, Khimiya, Mekhanika
- Journal Issue
- no.6
- Series
- Poverkhn.: Fiz., Khim., Mekh.
- CODEN
- PFKMD
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 23016550
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; ION IMPLANTATION; KEV RANGE 100-1000; N-TYPE CONDUCTORS; NITROGEN; NITROGEN IONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SILICON; SPATIAL DISTRIBUTION; THERMAL CYCLING
- Descriptors DEC
- CHARGED PARTICLES; DISTRIBUTION; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; MATERIALS; NONMETALS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS