Deformation potential constants Ξu and Ξd in n-Si determined with the use of the tensoresistance effect

On the basis of longitudinal piezoresistance measurements in the geometry X || J [100] and the theory of anisotropic scattering, the deformation potential constants Ξu and Ξd for γ-irradiated n-Si have been determined. It has been shown that, while determining the anisotropy of relaxation times for n-Si with the deep energy level Ec-0.17 eV, the dependence of the concentration of deep ionized centers on the deformation must be taken into consideration.