Published 2004 | Version v1
Miscellaneous Open

Effect of ion implantation on electron yield band depth and emission properties of CaF2/Si (111)

  • 1. Karshinskij Inzhenerno-Ehkonomicheskij Inst., Karshi (Uzbekistan)

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Part of:
Summaries of reports of the XXXIV International conference on physics of charged particle-crystal interactions

Additional details

Additional titles

Original title (Russian)
Влияние ионной имплантации на глубину зоны выхода электронов и эмиссионных свойств пленок CaF

Publishing Information

Publisher
Izdatel'stvo UNTs DO
Imprint Place
Moscow (Russian Federation)
Imprint Title
Summaries of reports of the XXXIV International conference on physics of charged particle-crystal interactions
Imprint Pagination
168 p.
Journal Page Range
p. 90
Report number
INIS-RU--491

Conference

Title
34. International conference on physics of charged particle-crystal interactions
Original Conference Title
XXXIV mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates
31 May - 2 Jun 2004
Place
Moscow (Russian Federation)

Optional Information

Notes
1 tab. Imprint:Tezisy dokladov XXXIV mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami