Published 2019 | Version v1
Journal article

Correlating results from high resolution EBSD with TEM- and ECCI-based dislocation microscopy: Approaching single dislocation sensitivity via noise reduction

  • 1. Sandia National Laboratory (SNL-NM), Albuquerque, NM (United States)
  • 2. National Institute of Aerospace, Hampton, VA (United States)
  • 3. Georgia Institute of Technology, Atlanta, GA (United States)
  • 4. Michigan State University, East Lansing, MI (United States)

Description

High resolution electron backscatter diffraction (HREBSD), an SEM-based diffraction technique, may be used to measure the lattice distortion of a crystalline material and to infer the geometrically necessary dislocation content. Uncertainty in the image correlation process used to compare diffraction patterns leads to an uneven distribution of measurement noise in terms of the lattice distortion, which results in erroneous identification of dislocation type and density. This work presents a method of reducing noise in HREBSD dislocation measurements by removing the effect of the most problematic components of the measured distortion. The method is then validated by comparing with TEM analysis of dislocation pile-ups near a twin boundary in austenitic stainless steel and with ECCI analysis near a nano-indentation on a tantalum oligocrystal. The HREBSD dislocation microscopy technique is able to resolve individual dislocations visible in TEM and ECCI and correctly identify their Burgers vectors.

Availability note (English)

Available from https://www.osti.gov/servlets/purl/1593338; https://www.osti.gov/biblio/1593338; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo period

Additional details

Publishing Information

Journal Title
Ultramicroscopy (Amsterdam)
Journal Volume
210
Journal Issue
C
Journal Page Range
vp.
ISSN
0304-3991