Published May 2015 | Version v1
Journal article

InGaN photocatalysts on conductive Ga2O3 substrates

  • 1. Department of Applied Physics, Tokyo University of Science, Katsushika, Tokyo (Japan)
  • 2. Tamura Corporation, Sayama, Saitama (Japan)

Description

We succeeded in hydrogen evolution using InGaN photocatalysts grown on conductive Ga2O3 substrates. These photocatalysts exhibited a conversion efficiency of 0.8% from incident light energy to stored H2 chemical energy. Their quantum efficiency was determined to be more than 1% at 404 nm by incident photon-to-current conversion efficiency (IPCE) measurement. We found that the wavelength response of the InGaN structure can be extended to the visible region. These results indicate that the conductive Ga2O3 substrates are suitable for the photocatalysts. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.201431731

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. A, Applications and Materials Science
Journal Volume
212
Journal Issue
5
Journal Page Range
p. 1029-1032
ISSN
1862-6300
CODEN
PSSABA