Published July 2013
| Version v1
Journal article
Directly extracting both threshold voltage and series resistance from the conductance—voltage curve of an AlGaN/GaN Schottky diode
Creators
- 1. Science and Technology on Application Specific Integrated Circuit (ASIC) Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
- 2. School of Physics, Shandong University, Jinan 250100 (China)
Description
An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance—voltage (G—V) curve and found to be in good agreement with the ones obtained by using the capacitance—voltage (C—V) curve integration and the plot of dV/d(ln I) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance—voltage curve for the AlGaN/GaN Schottky diode is developed
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/22/7/077102Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 22
- Journal Issue
- 7
- Journal Page Range
- [4 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45034406
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; CAPACITANCE; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDES; GOLD; HETEROJUNCTIONS; INTERFACES; NICKEL; SCHOTTKY BARRIER DIODES
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; GALLIUM COMPOUNDS; METALS; NITRIDES; NITROGEN COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENTS