Published October 31, 1999
| Version v1
Journal article
Phase-locking of a linear array of high-power laser diodes
Creators
- 1. A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
- 2. Natural Science Center, A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
Description
Continuous emission was obtained from a phase-locked (in an external cavity) linear array of laser diodes with a power in excess of 10 W. This was done by using an efficient heat sink based on a porous structure with a thermal resistance better than 0.3 0C W-1. For a power of 1.5 W, a divergence of the lobes was ∼0.1 mrad in the plane of the p-n junction, corresponding to the diffraction limit at the radiation wavelength λ=0.94 μm for an aperture of 1 cm. The promising trends in the development of technologies based on laser-diode arrays are considered. (letters to the editor)
Availability note (English)
Available from http://dx.doi.org/10.1070/QE1999v029n10ABEH001586Additional details
Identifiers
Publishing Information
- Journal Title
- Quantum Electronics (Woodbury, N.Y.)
- Journal Volume
- 29
- Journal Issue
- 10
- Journal Page Range
- p. 839-841
- ISSN
- 1063-7818
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42035082
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DIFFRACTION; EMISSION; HEAT SINKS; LASER CAVITIES; LASERS; MODE LOCKING; P-N JUNCTIONS; POROUS MATERIALS; WAVELENGTHS
- Descriptors DEC
- COHERENT SCATTERING; MATERIALS; SCATTERING; SEMICONDUCTOR JUNCTIONS; SINKS