Published October 31, 1999 | Version v1
Journal article

Phase-locking of a linear array of high-power laser diodes

  • 1. A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
  • 2. Natural Science Center, A.M. Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

Description

Continuous emission was obtained from a phase-locked (in an external cavity) linear array of laser diodes with a power in excess of 10 W. This was done by using an efficient heat sink based on a porous structure with a thermal resistance better than 0.3 0C W-1. For a power of 1.5 W, a divergence of the lobes was ∼0.1 mrad in the plane of the p-n junction, corresponding to the diffraction limit at the radiation wavelength λ=0.94 μm for an aperture of 1 cm. The promising trends in the development of technologies based on laser-diode arrays are considered. (letters to the editor)

Availability note (English)

Available from http://dx.doi.org/10.1070/QE1999v029n10ABEH001586

Additional details

Publishing Information

Journal Title
Quantum Electronics (Woodbury, N.Y.)
Journal Volume
29
Journal Issue
10
Journal Page Range
p. 839-841
ISSN
1063-7818

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42035082
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DIFFRACTION; EMISSION; HEAT SINKS; LASER CAVITIES; LASERS; MODE LOCKING; P-N JUNCTIONS; POROUS MATERIALS; WAVELENGTHS
Descriptors DEC
COHERENT SCATTERING; MATERIALS; SCATTERING; SEMICONDUCTOR JUNCTIONS; SINKS