TSC measurements in a-Ge22Se78-xBix thin films

In the present paper thermally stimulated current measurements have been made in a-Ge22Se78-xBix (x=0, 10) thin films in order to determine trap parameters such as trap depth and trap density. Trap depth has been calculated using the initial rise method proposed by Garlick and Gibson. The trap depth is found to be 0.41 and 0.30 eV for x=0 and 10, respectively. The trap density (Nt) was also calculated, which was found to be 2.08x1017 and 1.48x1016 cm-3 for x=0 and 10, respectively. The decrease in trap density on Bi addition is explained in terms of the structure of the ternary alloy.