Published August 2012
| Version v1
Journal article
Cathode-Control Alloying at an Au-ZnSe Nanowire Contact via in Situ Joule Heating
- 1. Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, Hunan University, Changsha 410082 (China)
- 2. Beijing Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
Description
Controllable interfacial alloying is achieved at a Au-ZnSe nanowire (M-S) contact via in situ Joule heating inside transmission electron microscopy (TEM). TEM inspection reveals that the Au electrode is locally molten at the M-S contact and the tip of the ZnSe nanowire is covered by the Au melting. Experimental evidences confirm that the alloying at the reversely biased M-S contact is due to the high resistance of the Schottky barrier at this M-S contact, coincident to cathode-control mode. Consequently, in situ Joule heating can be an effective method to improve the performance of nanoelectronics based on a metal-semiconductor-metal nanostructure. (cross-disciplinary physics and related areas of science and technology)
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/29/8/088105Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 29
- Journal Issue
- 8
- Journal Page Range
- [3 p.]
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45003551
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CATHODES; DIFFUSION BARRIERS; GOLD; JOULE HEATING; MELTING; NANOSTRUCTURES; PERFORMANCE; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; ZINC SELENIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRIC HEATING; ELECTRODES; ELECTRON MICROSCOPY; ELEMENTS; HEATING; MATERIALS; METALS; MICROSCOPY; PHASE TRANSFORMATIONS; PLASMA HEATING; SELENIDES; SELENIUM COMPOUNDS; TRANSITION ELEMENTS; ZINC COMPOUNDS