Published January 2008
| Version v1
Journal article
Measurement of thickness of insensitive layers of semiconductor detectors
Creators
- 1. Moskovskij Inzhenerno-Fizicheskij Inst., Moscow (Russian Federation)
- 2. Ob''edinennyj Inst. Yadernykh Issledovanij, Dubna (Joint Institute for Nuclear Research (JINR))
Description
Paper dwells upon the ways to measure the depth of the dead layers of Si(Li)- and HPGe-detectors making use of the radioactive sources of the electrons, of the γ-quanta and of the α-particles. The elaborated procedure enables to determine the depth of the mentioned layers with maximum 1% error
Abstract (Russian)
Представлены способы измерения толщины мертвых слоев Si(Li)- и НPGе-детекторов с помощью радиоактивных источников электронов, γ-квантов и α-частиц. Разработанная методика позволяет определять толщину этих слоев с погрешностью не хуже 1%Additional details
Additional titles
- Original title (Russian)
- Измерение толщины нечувствительных слоев полупроводниковых детекторов
Publishing Information
- Journal Title
- Pribory i Tekhnika Ehksperimenta
- Journal Issue
- no.1
- Journal Page Range
- p. 67-71
- ISSN
- 0032-8162
- CODEN
- PRTEAJ
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 40088636
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ALPHA SPECTRA; ELECTRON SPECTRA; ERRORS; EXPERIMENTAL DATA; HIGH-PURITY GE DETECTORS; LI-DRIFTED SI DETECTORS; MEASURING METHODS; SENSITIVITY; SPECTROSCOPY; THICKNESS
- Descriptors DEC
- DATA; DIMENSIONS; GE SEMICONDUCTOR DETECTORS; INFORMATION; LI-DRIFTED DETECTORS; MEASURING INSTRUMENTS; NUMERICAL DATA; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SI SEMICONDUCTOR DETECTORS; SPECTRA
Optional Information
- Notes
- 10 refs., 7 figs.