Published December 1985
| Version v1
Journal article
Synchrotron plane wave x-ray topography of GaAs with a separate (+, +) monochro-collimator
- 1. National Lab. for High Energy Physics, Oho, Ibaraki (Japan)
Description
A plane wave X-ray topographic camera was constructed with a separate (+, +) monochro-collimator system at Photon Factory. Undoped and indium-doped GaAs crystals are topographically investigated. For the undoped GaAs, a two-fold symmetric strain field has been observed in a (001) wafer. In the indium-doped sample, a highly stressed region probably produced by the in segregation has been observed. (author)
Additional details
Publishing Information
- Journal Title
- Jpn. J. Appl. Phys., Part 2
- Journal Volume
- 24
- Journal Issue
- 12
- Series
- Jpn. J. Appl. Phys., Part 2.
- Journal Page Range
- L968-L971
- CODEN
- JAPLD
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 18006841
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; COLLIMATORS; DOPED MATERIALS; GALLIUM ARSENIDES; INDIUM; MONOCRYSTALS; SILICON; SYNCHROTRON RADIATION; TOPOGRAPHY; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BREMSSTRAHLUNG; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELEMENTS; GALLIUM COMPOUNDS; MATERIALS; METALS; RADIATIONS; SCATTERING; SEMIMETALS