Published 1984 | Version v1
Journal article Metadata-only

Reaction mechanisms of plasma etching - a quantum chemical study

Creators

  • 1. Friedrich-Schiller-Universitaet, Jena (German Democratic Republic). Sektion Chemie

Description

Using semi-empirical quantum chemical approximation methods (EHMO, CNDO) and the cluster model of solid surface, elementary steps of plasma etching are discussed within the system halogen radical metal surface. For some metals (V. and VIII. subgroup, aluminium) a reaction mechanism is suggested using the balloon effect. (author)

Additional details

Additional titles

Original title (German)
Reaktionsmechanismen beim Plasmaaetzen - eine quantenchemische Studie

Publishing Information

Journal Title
Wiss. Z. Friedrich-Schiller-Univ., Jena, Math.-Naturwiss. Reihe
Journal Volume
33
Journal Issue
1-2
Series
Wiss. Z. Friedrich-Schiller-Univ., Jena, Math.-Naturwiss. Reihe.
Journal Page Range
11-17
ISSN
0043-6836

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
16028183
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM; CHEMISORPTION; ETCHING; LCAO METHOD; PLASMA; SEMICONDUCTOR MATERIALS; SOLID CLUSTERS; SURFACES; TETRACHLOROMETHANE; TETRAFLUOROMETHANE
Descriptors DEC
CHEMICAL REACTIONS; ELEMENTS; MATERIALS; METALS; ORGANIC CHLORINE COMPOUNDS; ORGANIC COMPOUNDS; ORGANIC FLUORINE COMPOUNDS; ORGANIC HALOGEN COMPOUNDS; SEPARATION PROCESSES