Published June 16, 2004 | Version v1
Journal article

The de Haas-van Alphen effect and the Fermi surface in CePt3Si and LaPt3Si

  • 1. Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043 (Japan)
  • 2. Advanced Science Research Center, Japan Atomic Energy Research Institute, Tokai, Ibaraki 319-1195 (Japan)
  • 3. Advanced Science Research Center, Japan Atomic Energy Research Institute, Tokai, Ibaraki 319-1195, Japan (Japan)
  • 4. The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047 (Japan)

Description

We have carried out a de Hass-van Alphen (dHvA) experiment for the recently discovered CePt3Si, which is the first heavy fermion superconductor without inversion symmetry in the tetragonal crystal structure, together with a dHvA experiment for a non-4f reference compound LaPt3Si. As for LaPt3Si, several dHvA branches were observed. Among them, the two main dHvA branches with the dHvA frequency (the cyclotron effective mass) of 1.10 x 108 Oe (1.4 m0) and 8.41 x 107 Oe (1.5 m0) were found to be well explained from the FLAPW energy band calculations, corresponding to bands 64- and 63-multiply-connected hole Fermi surfaces, respectively. On the other hand, the dHvA frequencies of 107 Oe in CePt3Si are small in magnitude, although the corresponding cyclotron masses of 10-20 m0 are extremely large. (letter to the editor)

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/16/L287/cm4_23_L02.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
16
Journal Issue
23
Journal Page Range
p. L287-L296
ISSN
0953-8984
CODEN
JCOMEL