Published March 17, 2004 | Version v1
Journal article

The heteroisomeric diode

  • 1. Department of Physics and Astronomy and the Center for Materials Research and Analysis, Behlen Laboratory of Physics, University of Nebraska-Lincoln, Lincoln, NE 68588-0111 (United States)
  • 2. College of Engineering and Technology and Center for Materials Research and Analysis, University of Nebraska-Lincoln, Lincoln, NE 68588 (United States)

Description

We have fabricated a new class of diode from two different polytypes of boron carbide. Diodes were fabricated by chemical vapour deposition from two different isomers of closo-dicarbadodecaborane: closo-1,2-dicarbadodecaborane (orthocarborane, C2B10H12) and closo-1,7-dicarbadodecaborane (metacarborane, C2B10H12), differing only by the carbon placement within the icosahedral cage. We find that the electronic structure (molecular orbitals) of these two isomer molecules and the resulting decomposition reflect the tendency of metacarborane to form an n-type semiconductor while orthocarborane is an effective source compound for a slightly p-type semiconducting boron carbide. The diodes of this novel class are effective solid state neutron detectors, and have a number of unique applications. (letter to the editor)

Availability note (English)

Available online at http://stacks.iop.org/0953-8984/16/L139/cm4_10_L04.pdf or at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-648X) http://www.iop.org/

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
16
Journal Issue
10
Journal Page Range
p. L139-L146
ISSN
0953-8984
CODEN
JCOMEL