Published 2020 | Version v1
Journal article

Hydrogen depth-profiles in Nb hydrides formed in supercritical water

  • 1. Nagoya University, Graduate School of Engineering, Department of Quantum Engineering, Nagoya, Aichi (Japan)
  • 2. Nagoya University, Graduate School of Engineering, Department of Material, Physics and Energy Engineering, Nagoya, Aichi (Japan)
  • 3. Nagoya University, Graduate School of Engineering, Department of Crystalline Materials Science, Nagoya, Aichi (Japan)
  • 4. Wakasa Wan Energy Research Center, Tsuruga, Fukui (Japan)
  • 5. Japan Synchrotron Radiation Research Center, Sayo, Hyogo (Japan)

Description

The hydrogen content x of Nb hydrides, NbHx and/or NbDx, formed in supercritical water under extremely high pressures and temperatures were studied as a function of the depth from the hydride surface via ion-beam analyses (elastic recoil detection analysis with Rutherford backscattering spectrometry, ERDA/RBS). The hydrogen-rich α'-NbH (x approx. = 0.9) formed a surface layer approximately 200-nm thick with a 4-25 nm Nb oxide overlayer, which was invisible or only barely visible in the X-ray diffraction (XRD) analysis, whereas the hydrogen-poor α-NbH (x < 0.2) was visible to a depth of 1 μm in the bulk. The oxide overlayer thickened with further hydrogenation. The exchange of D with H was suggested in the surface region for the hydride specimen formed with D2O. The chemical states of the studied specimens were also analyzed via the angle-dependent hard X-ray photoelectron spectroscopy, HAXPES. The formation mechanism of Nb hydrides is discussed based on the depth profiles of the hydrogen content x and the chemical states, as well as XRD results of the Nb hydrides. (author)

Availability note (English)

Available from DOI: https://doi.org/10.1380/ejssnt.2020.152

Additional details

Identifiers

Publishing Information

Journal Title
E-Journal of Surface Science and Nanotechnology
Journal Volume
18
Journal Page Range
p. 152-158
ISSN
1348-0391

Optional Information

Notes
24 refs., 7 figs.