Published 1984 | Version v1
Journal article Metadata-only

Radiation effects appearing in new technologies of MOS VLSI structures

Creators

  • 1. Politechnika Warszawska (Poland)

Description

An attempt is done to synthesize the problems connected with irradiation of submicrometric MOS circuits during fabrication. Radiation modifications in the dielectric, created during ion implantation, plasma etching, electron beam metalization and litography are considered. The influence of these defects on some parameters of MOS transistors and examples of methods of removing and avoiding these changes are also presented. (author)

Additional details

Additional titles

Original title (Polish)
Efekty radiacyjne wystepujace w nowych technologiach struktur MOS VLSI

Publishing Information

Journal Title
Elektronika (Warsaw)
Journal Volume
25
Journal Issue
11
Series
Elektronika (Warsaw).
Journal Page Range
15-19
ISSN
0033-2089
CODEN
EKNTB

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
19019160
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ELECTRON BEAMS; ETCHING; FABRICATION; ION IMPLANTATION; IRRADIATION; MICROELECTRONIC CIRCUITS; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; PLASMA
Descriptors DEC
BEAMS; ELECTRONIC CIRCUITS; LEPTON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS