Ion beam induced desorption from thin films: SiO2 single layers and SiO2/Si multilayers

The occurrence of O2 molecular loss from the bulk of SiO2 single layers and SiO2/Si multilayers as a result of 50 MeV Cu9+ irradiation has been investigated. This process did not take place with a significant rate, if it occurs at all. Instead both Si and O are removed from the SiO2 surface region, releasing molecular O2. If an elemental Si layer is on top in a multilayer, removal of Si and O with an appreciable rate is not observed. The irradiation creates bubbles in the SiO2/Si multilayers, which contain O2. The distinct SiO2 sublayers remain chemically intact. The bubbles deteriorate the depth resolution in elastic recoil detection