Published May 15, 1991
| Version v1
Journal article
Extreme g-factor anisotropy induced by strain
- 1. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (USA)
- 2. Sandia National Laboratory, Albuquerque, New Mexico 87185 (USA)
- 3. Bell Communication Research, Red Bank, New Jersey 08544 (USA)
Description
Magnetotransport measurements as a function of B-field orientation are studied on p-type strained-layer (001) GaAs/In0.20Ga0.80As/GaAs quantum wells at temperatures from 4.2 to 0.4 K. It is shown that the two-dimensional holes are derived from the mj=±3/2 subbands and that the Zeeman splitting between the mj=3/2 and mj=-3/2 states of the same Landau level depends on the components of B perpendicular to the strained layer and not the total B. This g-factor anisotropy is shown to be a consequence of the large uniaxial strain in the In0.20Ga0.80As layer
Additional details
Publishing Information
- Journal Title
- Physical Review, B: Condensed Matter
- Journal Volume
- 43
- Journal Issue
- 14
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 12110-12113
- ISSN
- 0163-1829
- CODEN
- PRBMD
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22076322
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; CYCLOTRON RESONANCE; GALLIUM ARSENIDES; HOLES; INDIUM ARSENIDES; LANDE FACTOR; SHUBNIKOV-DE HAAS EFFECT; STRAINS; ULTRALOW TEMPERATURE; ZEEMAN EFFECT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; PNICTIDES; RESONANCE