Room-temperature deposition of crystalline patterned ZnO films by confined dewetting lithography
Creators
- 1. Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia. UANL, PIIT Monterrey, CP 66629, Apodaca NL (Mexico)
- 2. Texas Materials Institute, University of Texas at Austin, Austin, TX 78712 (United States)
- 3. Centro de Investigacion en Optica, Loma del Bosque 115 Col. Lomas del Campestre C.P. 37150 Leon, Gto. Mexico (Mexico)
- 4. Instituto Nacional de Astrofisica Optica y Electronica, Calle Luis Enrique Erro No. 1, Santa Maria Tonanzintla, Puebla. Apdo. Postal 51 y 216, C.P. 72000 Puebla (Mexico)
- 5. Centro de Investigacion en Ingenieria y Ciencias Aplicadas, UAEM. Av. Universidad 1001, Col. Chamilpa, CP 62210 Cuernavaca, Mor. (Mexico)
- 6. Physics and Astronomy Department University of Texas at San Antonio 1604 campus San Antonio, TX 78249 (United States)
Description
In this work patterned ZnO films were prepared at room-temperature by deposition of ∼5 nm size ZnO nanoparticles using confined dewetting lithography, a process which induces their assembly, by drying a drop of ZnO colloidal dispersion between a floating template and the substrate. Crystalline ZnO nanoparticles exhibit a strong visible (525 nm) light emission upon UV excitation (λ = 350 nm). The resulting films were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM). The method described herein presents a simple and low cost method to prepare crystalline ZnO films with geometric patterns without additional annealing. Such transparent conducting films are attractive for applications like light emitting diodes (LEDs). As the process is carried out at room temperature, the patterned crystalline ZnO films can even be deposited on flexible substrates.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2009.12.039Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2009.12.039;
- PII
- S0169-4332(09)01748-6;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 256
- Journal Issue
- 11
- Journal Page Range
- p. 3386-3389
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44017991
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; ATOMIC FORCE MICROSCOPY; DEPOSITION; DISPERSIONS; EMISSION; EXCITATION; FILMS; LIGHT EMITTING DIODES; NANOSTRUCTURES; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELECTRON MICROSCOPY; ENERGY-LEVEL TRANSITIONS; HEAT TREATMENTS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.