Published 1992 | Version v1
Book Metadata-only

Interfacial reactions between In/Pd and GaAs

Creators

  • 1. Illinois Univ., Urbana, IL (United States). Dept. of Materials Science and Engineering
  • 2. MTM Dept., Kuleuven (Belgium)
  • 3. Cornell Univ., Ithaca, NY (United States). Dept. of Materials Science and Engineering
  • 4. Bellcore, Red Bank, NJ (United States)

Description

This paper discusses interfacial microstructure of In/Pd ohmic contacts to n-GaAs studied by various X-ray diffraction techniques and secondary ion mass spectroscopy. Analysis of this interface after various annealing showed that In1-xGaxAs compound are formed at the interface and the composition of these compounds depends upon the annealing temperature. As the temperature increases, the stoichiometry of the In-rich compounds tends toward higher concentrations of Ga. The low contact resistance is achieved by dividing the Schottky barrier between metal and GaAs into two barriers due to metal/In1-xGaxAs and In1-xGaxAs/GaAs. The barrier due to In1-xGaxAs/GaAs is believed to be the main limiting factor in lowering of contact resistance. The observed ohmic behavior for sample annealed at 500 degrees C for 20 s is attributed to the further reduction of this barrier

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-58899-124-7
Imprint Title
Phase transformation kinetics in thin films
Imprint Pagination
366 p.
Journal Page Range
p. 131-138.

Conference

Title
Spring meeting of the Materials Research Society (MRS).
Dates
29 Apr - 3 May 1991.
Place
Anaheim, CA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
23074482
Subject category
S36: MATERIALS SCIENCE; S74: ATOMIC AND MOLECULAR PHYSICS; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; CHEMICAL COMPOSITION; CHEMICAL REACTION KINETICS; ELECTRIC CONTACTS; GALLIUM ARSENIDES; INDIUM ALLOYS; INTERFACES; N-TYPE CONDUCTORS; PALLADIUM ALLOYS; PHASE STUDIES; RESONANCE IONIZATION MASS SPEC; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION
Descriptors DEC
ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; DIFFRACTION; ELECTRICAL EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; HEAT TREATMENTS; KINETICS; MASS SPECTROSCOPY; MATERIALS; PLATINUM METAL ALLOYS; PNICTIDES; REACTION KINETICS; SCATTERING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SPECTROSCOPY

Optional Information

Secondary number(s)
CONF-910406--.