Published August 22, 2007 | Version v1
Journal article

Optical properties of In0.3Ga0.7N/GaN green emission nanorods fabricated by plasma etching

  • 1. Department of Photonics, National Chiao Tung University, Hsinchu 300, Taiwan (China)
  • 2. Department of Materials Engineering, National Chung Hsing University, Taichung 402, Taiwan (China)
  • 3. Department of Physics, National Changhua University of Education, Changhua 500, Taiwan (China)

Description

In this study, we have fabricated In0.3Ga0.7N/GaN green emission nanorods and demonstrated optical enhancement by photoluminescence (PL) measurements. An enhancement factor of 3.5 and an emission peak blue-shift of 6.6 nm were observed at 300 K for the green emission nanorods structure in comparison to the as-grown flat surface structure. The blue-shift phenomenon from the nanorod structure could be caused by a partial reduction of the internal piezoelectric field. However, the similar carrier decay time for the green emission nanorod structure and the as-grown flat surface structure observed in low-temperature time-resolved PL measurements indicates that the dominant optical enhancement mechanism of the green emission nanorod structure could be mainly resulting from the large emission surface areas and the multiple scattering paths between the nanorods

Additional details

Identifiers

DOI
10.1088/0957-4484/18/33/335706;
PII
S0957-4484(07)47601-2;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
18
Journal Issue
33
Journal Page Range
p. 335706
ISSN
0957-4484