Published 2001 | Version v1
Miscellaneous Metadata-only

X-ray study of structural modifications in Si-implanted silicon wafers by thermal annealing

Creators

  • 1. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
  • 2. Institute of Experimental Physics, Warsaw University, Warsaw (Poland)

Description

no abstract available

Part of:
Abstracts of 4. International School and Symposium on Physics in Materials Science ISSPMS'2001

Additional details

Publishing Information

Imprint Title
Abstracts of 4. International School and Symposium on Physics in Materials Science ISSPMS'2001
Imprint Pagination
[52 p.]
Journal Page Range
p. 29

Conference

Title
4. International School and Symposium on Physics in Materials Science ISSPMS'2001
Dates
23-29 Sep 2001
Place
Jaszowiec (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
33063332
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract, Conference, Non-conventional Literature
Descriptors DEI
ANNEALING; CRYSTAL STRUCTURE; ION IMPLANTATION; MONOCRYSTALS; POLYCRYSTALS; REFLECTIVITY; SILICON; SILICON IONS; SILICON OXIDES; SYNCHROTRON RADIATION; X-RAY DIFFRACTION
Descriptors DEC
BREMSSTRAHLUNG; CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTALS; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; IONS; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS; SCATTERING; SEMIMETALS; SILICON COMPOUNDS; SURFACE PROPERTIES

Optional Information

Contract/Grant/Project number
KBN grant no. 2 P03B 095 16; EC IHP-contract HPRI-CT-1999-00040