Published August 1995
| Version v1
Journal article
New profiled silicon PIN photodiode for scintillation detector
Description
Silicon photodiodes (planar PIN) are employed for the read out of scintillation shower counters. The authors have already reported on a new doping method called molecular layer doping (MLD) which has been developed for very large scale integrated (VLSI) technologies. In tis study, several types of PIN photodiodes, in which a p+ layer was formed by MLD (MLD-PIN) or BFD2 ion implantation (BF2 I/I-PIN), have been examined. The MLD-PIN has a shallow P+ junction depth (xj) with sufficient high surface concentration, and simply and easily provides good performance for a short-wavelength photo sensitivity
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 42
- Journal Issue
- 4Pt1
- Journal Page Range
- p. 345-350.
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- medical imaging conference.
- Acronym
- Nuclear science symposium
- Dates
- 30 Oct - 5 Nov 1994.
- Place
- Norfolk, VA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27015950
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BARIUM FLUORIDES; CRYSTAL DOPING; PERFORMANCE; PHOTODIODES; READOUT SYSTEMS; SCINTILLATOR-PHOTODIODE DETECTORS; SHOWER COUNTERS
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BARIUM COMPOUNDS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; MEASURING INSTRUMENTS; RADIATION DETECTORS; SCINTILLATION COUNTERS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Secondary number(s)
- CONF-941061--.