Vibrating capacitor method in the development of semiconductor gas sensors
Creators
- 1. Department of Electron Devices, Budapest University of Technology and Economics, Budapest 1521 (Hungary)
Description
Adsorption usually results in work function shifts on catalytically active surfaces such as semiconductor gas sensors. The purpose of the present article is to summarise the capabilities of the vibrating capacitor from the simplest adsorption-induced work function tests to the scanning, vibrating, capacitor-yielded olfactory pictures and other chemical pictures. After a brief history and review of theoretical bases, the latest results will be discussed in detail. Olfactory pictures from semiconductor surfaces give a new chance to improve the selectivity of gas analysis. Chemical pictures from thin SnO2 layers produced by atomic layer epitaxy reveal the inhomogeneities of the technology. CPD maps taken from Pd nanolayer (activator)-covered surfaces help to find the best layer-depositing parameters for the activation process of the thin semiconductor gas sensor films
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.04.021;
- PII
- S0040-6090(05)00317-2;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 490
- Journal Issue
- 1
- Journal Page Range
- p. 17-21
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 4. international workshop on semiconductor gas sensors
- Acronym
- SGS 2004
- Dates
- 19-23 Sep 2004
- Place
- Ustron (Poland)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37023053
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ADSORPTION; CAPACITORS; EPITAXY; GAS ANALYSIS; INTERFACES; LAYERS; SEMICONDUCTOR MATERIALS; SURFACE POTENTIAL; SURFACES; THIN FILMS; TIN OXIDES; WORK FUNCTIONS
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRICAL EQUIPMENT; EQUIPMENT; FILMS; FUNCTIONS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; POTENTIALS; SORPTION; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.