Published October 21, 2005 | Version v1
Journal article

Vibrating capacitor method in the development of semiconductor gas sensors

  • 1. Department of Electron Devices, Budapest University of Technology and Economics, Budapest 1521 (Hungary)

Description

Adsorption usually results in work function shifts on catalytically active surfaces such as semiconductor gas sensors. The purpose of the present article is to summarise the capabilities of the vibrating capacitor from the simplest adsorption-induced work function tests to the scanning, vibrating, capacitor-yielded olfactory pictures and other chemical pictures. After a brief history and review of theoretical bases, the latest results will be discussed in detail. Olfactory pictures from semiconductor surfaces give a new chance to improve the selectivity of gas analysis. Chemical pictures from thin SnO2 layers produced by atomic layer epitaxy reveal the inhomogeneities of the technology. CPD maps taken from Pd nanolayer (activator)-covered surfaces help to find the best layer-depositing parameters for the activation process of the thin semiconductor gas sensor films

Additional details

Identifiers

DOI
10.1016/j.tsf.2005.04.021;
PII
S0040-6090(05)00317-2;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
490
Journal Issue
1
Journal Page Range
p. 17-21
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
4. international workshop on semiconductor gas sensors
Acronym
SGS 2004
Dates
19-23 Sep 2004
Place
Ustron (Poland)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37023053
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ADSORPTION; CAPACITORS; EPITAXY; GAS ANALYSIS; INTERFACES; LAYERS; SEMICONDUCTOR MATERIALS; SURFACE POTENTIAL; SURFACES; THIN FILMS; TIN OXIDES; WORK FUNCTIONS
Descriptors DEC
CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRICAL EQUIPMENT; EQUIPMENT; FILMS; FUNCTIONS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; POTENTIALS; SORPTION; TIN COMPOUNDS

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.