Radiation effects on GaAsP light-emitting diodes and Schottky barrier field-effect transistors

New processes developed for the fabrication of gallium-arsenide-phosphide light-emitting diodes and Schottky barrier field-effect transistors are described. The fabricated devices were characterized electrically and were tested in a radiation environment. Transient effects on p-n junction diodes due to high energy electron beams were examined and the permanent damage caused by high energy neutrons on both diodes and SBFETs were evaluated. (U.S.)