Analytical frequency-domain model for coupled interconnects of doped multilayer graphene nanoribbons and mixed carbon nanotube bundles

An analytical frequency-domain model, based on a temperature-dependent equivalent-single-conductor (ESC) model, for coupled interconnects of multilayer graphene nanoribbon (MLGNR) and mixed carbon-nanotube bundle (MCB) is presented. In this model, the input-output transfer function of coupled interconnects is derived under dynamic switching conditions to analyze its bandwidth, delay, and stability performance. The obtained results demonstrate the best bandwidth performance of AsF${}_5$-doped-MLGNR among the undoped-MLGNR (U-MLGNR), doped-MLGNR (viz., AsF${}_5$-doped and FeCl${}_3$-doped), MCB, and Cu interconnects. An improvement in a bandwidth of 14, 8.8, and 63.2 GHz is obtained with global ength (≈1000 µm) AsF${}_5$-doped-MLGNR in comparison with U-MLGNR, MCB, and Cu, respectively. Based on the Nyquist stability criterion, interconnects of doped-MLGNR are found more stable than their U-MLGNR and MCB counterparts, however, less stable than Cu interconnects. Also, a frequency-domain model for complementary metal-oxide semiconductor (CMOS)-gate-driven single MLGNR interconnect is derived. It is noted that using the proposed CMOS-gate based model, a bandwidth improvement of 12.25× is obtained with global length AsF${}_5$-doped-MLGNR with respect to a linear resistive model. Furthermore, the temperature-dependent, frequency-domain analysis of the capacitively coupled interconnects under functional switching conditions reveals that AsF${}_5$-doped-MLGNR interconnects are highly capable of filtering out the noise frequency components in the crosstalk-induced noise (© 2020 Wiley‐VCH GmbH)