Published December 1, 2009
| Version v1
Journal article
The silicon vacancy in SiC
Creators
- 1. Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping (Sweden)
- 2. Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, H-1111 Budapest (Hungary)
- 3. Norstel AB, Ramshaellsvaegen 15, SE-602 38 Norrkoeping (Sweden)
Description
The isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physb.2009.09.023Additional details
Identifiers
- DOI
- 10.1016/j.physb.2009.09.023;
- PII
- S0921-4526(09)01086-2;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 404
- Journal Issue
- 22
- Journal Page Range
- p. 4354-4358
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 3. South African conference on photonic materials
- Dates
- 23-27 Mar 2009
- Place
- Mabula (South Africa)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41086135
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE STATES; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE; POINT DEFECTS; SILICON; SILICON CARBIDES; VACANCIES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; MAGNETIC RESONANCE; POINT DEFECTS; RESONANCE; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.