Published 1995
| Version v1
Miscellaneous
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High energy Si,Zn and Ga Ion implantation into GaAs on Si
Creators
- 1. Optoelectronics Technology Research Laboratory, Tsukuba, Ibaraki, (Japan)
Description
Short communication
Files
28080511.pdf
Files
(22.8 kB)
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Additional details
Publishing Information
- Publisher
- Accademic Press.
- Imprint Title
- Ninth international conference on ion beam modification of materials. Book of abstracts
- Imprint Pagination
- 452 p.
- Journal Page Range
- p. 10075.
- Report number
- INIS-AU--0004
Conference
- Title
- 9. international conference on ion beam modification of materials.
- Acronym
- IBMM'95
- Dates
- 5-10 Feb 1995.
- Place
- Canberra (Australia).
INIS
- Country of Publication
- Australia
- Country of Input or Organization
- Australia
- INIS RN
- 28080511
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; GALLIUM ARSENIDES; GALLIUM IONS; IMPURITIES; ION IMPLANTATION; MEV RANGE 01-10; MOLECULAR BEAM EPITAXY; PHYSICAL RADIATION EFFECTS; SILICON IONS; ZINC IONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ENERGY RANGE; EPITAXY; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; MEV RANGE; PNICTIDES; RADIATION EFFECTS