Mechanical strength and tribological behavior of ion-beam deposited boron nitride films on non-metallic substrates
Description
An investigation was conducted to examine the mechanical strength and tribological properties of boron nitride (BN) films ion-beam deposited on silicon (Si), fused silica (SiO2), gallium arsenide (GaAs), and indium phosphide (InP) substrates in sliding contact with a diamond pin under a load. The results of the investigation indicate that BN films on nonmetallic substrates, like metal films on metallic substrates, deform elastically and plastically in the interfacial region when in contact with a diamond pin. However, unlike metal films and substrates, BN films on nonmetallic substrates can fracture when they are critically loaded. Not only does the yield pressure (hardness) of Si and SiO2 substrates increase by a factor of 2 in the presence of a BN film, but the critical load needed to fracture increases as well. The presence of films on the brittle substrates can arrest crack formation. The BN film reduces adhesion and friction in the sliding contact. BN adheres to Si and SiO2 and forms a good quality film, while it adheres poorly to GaAs and InP. The interfacial adhesive strengths were 1 GPa for a BN film on Si and appreciably higher than 1 GPa for a BN film on SiO2
Availability note (English)
Available from NTIS, PC A02/MF A01.
Files
Additional details
Publishing Information
- Imprint Pagination
- 24 p.
- Report number
- N--87-18668
Conference
- Title
- International conference on metallurgical coatings.
- Dates
- 23-27 Mar 1987.
- Place
- San Diego, CA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19054480
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- BORON NITRIDES; EXPERIMENTAL DATA; GALLIUM ARSENIDES; INDIUM PHOSPHIDES; ION BEAMS; MECHANICAL PROPERTIES; SILICON; SILICON OXIDES; SUBSTRATES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; BORON COMPOUNDS; CHALCOGENIDES; DATA; ELEMENTS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; NITRIDES; NITROGEN COMPOUNDS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Secondary number(s)
- NASA-TM--89818; E--3439; NAS--1.15:89818; CONF-870388--8.