Published October 8, 2001 | Version v1
Journal article

Shallow versus deep hydrogen states in ZnO and HgO

  • 1. Department of Physics and Astronomy, University College London, London (United Kingdom)
  • 2. ISIS Facility, Rutherford Appleton Laboratory, Chilton (United Kingdom)
  • 3. Department of Physics and Astronomy, University of Leicester, Leicester (United Kingdom)
  • 4. Physics Department, University of Coimbra, Coimbra (Portugal)
  • 5. Physics Department, Texas Tech University, Lubbock, TX (United States)

Description

The muonium states mimicking interstitial hydrogen in ZnO and HgO are compared. Whereas in ZnO a theoretically predicted shallow donor state is confirmed, in HgO we find a considerably deeper state. The respective ionization temperatures are around 40 K and 150 K and the donor ionization energies are 19±1 and 136±3 meV, deduced from the temperature dependence of the μSR (muon spin-rotation) signal amplitudes. The μSR spectra provide a comprehensive characterization of the undissociated paramagnetic states: the hyperfine parameters, which measure the electron spin density on and near the muon, differ by a factor of ∼30. These define a hydrogenic radius of 1.1 nm in ZnO but indicate a much more compact electronic wavefunction in HgO, more akin to those of Mu* and the AA9 centre in Si. These data should largely carry over to hydrogen as a guide to its electrical activity in these materials. (author)

Availability note (English)

Available online at the Web site for the Journal of Physics. Condensed Matter (ISSN 1361-6448X) http://www.iop.org/

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
13
Journal Issue
40
Journal Page Range
p. 9001-9010
ISSN
0953-8984

Conference

Title
Conference on doping issues in wide band-gap semiconductors
Dates
21-23 Mar 2001
Place
Exeter (United Kingdom)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
33014764
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BINDING ENERGY; ELECTRONIC STRUCTURE; ELECTRONS; HYDROGEN ADDITIONS; INTERSTITIALS; MERCURY OXIDES; MUON SPIN RELAXATION; TEMPERATURE DEPENDENCE; VALENCE; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ENERGY; FERMIONS; LEPTONS; MERCURY COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; POINT DEFECTS; RELAXATION; ZINC COMPOUNDS