Radiation damage effects on silicon surface barrier neclear detectors

Surface barrier nuclear detectors have been irradiated with 1.5 MeV electrons from a Van de Graaff accelerator vaccum. Changes in performance of the detectors which are strongly related to permanent damage effects on the carrier lifetime and the resistivity of silicon have been investigated for various integrated electron fluxes. The results indicate that the reverse current and noise of the detectors increase with increasing integrated fluxes. The theoritical values of the reverse current and noise are estimated by using the changes of bulk parameters and are in good agreement with the experimental values. The increases in the current and noise are mainly caused by the increases in the generation-recombination current and its noise which are related to the irradiation damage effects on the carrier lifetime. Changes in the capacitance have been discussed qualitatively.