A novel three dimensional semimetallic MoS2
- 1. Departments of Physics and Electronics, Hengyang Normal University, Hengyang 421008 (China)
- 2. Beijing Computational Science Research Center, Beijing 100084 (China)
- 3. Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan 610207 (China)
Description
Transition metal dichalcogenides (TMDs) have many potential applications, while the performances of TMDs are generally limited by the less surface active sites and the poor electron transport efficiency. Here, a novel three-dimensional (3D) structure of molybdenum disulfide (MoS2) with larger surface area was proposed based on first-principle calculations. 3D layered MoS2 structure contains the basal surface and joint zone between the different nanoribbons, which is thermodynamically stable at room temperature, as confirmed by first principles molecular dynamics calculations. Compared the two-dimensional layered structures, the 3D MoS2 not only owns the large surface areas but also can effectively avoid the aggregation. Interestingly, although the basal surface remains the property of the intrinsic semiconductor as the bulk MoS2, the joint zone of 3D MoS2 exhibits semimetallic, which is derived from degenerate 3d orbitals of the Mo atoms. The high stability, large surface area, and high conductivity make 3D MoS2 have great potentials as high performance catalyst.
Additional details
Identifiers
- DOI
- 10.1063/1.4879241;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 115
- Journal Issue
- 20
- Journal Page Range
- p. 204302-204302.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46010561
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AGGLOMERATION; ATOMS; CATALYSTS; CHALCOGENIDES; COMPUTERIZED SIMULATION; MOLECULAR DYNAMICS METHOD; MOLYBDENUM SULFIDES; NANOSTRUCTURES; SEMICONDUCTOR MATERIALS; STABILITY; SURFACE AREA; SURFACES; TEMPERATURE RANGE 0273-0400 K; TRANSITION ELEMENT COMPOUNDS
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; MATERIALS; MOLYBDENUM COMPOUNDS; REFRACTORY METAL COMPOUNDS; SIMULATION; SULFIDES; SULFUR COMPOUNDS; SURFACE PROPERTIES; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC