Low temperature deposition of VO2 thin films

VO2 thin films have been deposited by a variety of techniques such as thermal oxidation, reactive evaporation, and magnetron or ion beam sputtering. These methods routinely require deposition temperatures in excess of 400 degree C in order to promote crystallization of the VO2 phase. We report on a technique, employing low energy ion bombardment of reactively evaporated VO2, which promotes crystallization of the VO2 phase at temperatures as low as 300 degree C. Properties of films deposited at these unusually low substrate temperatures will be discussed