Published May 1997 | Version v1
Journal article Metadata-only

Effect of positive magnetoresistance in films of ferromagnetic Eu1-xSmxO semiconductor

Creators

  • 1. Saratovskij Gosudarstvennyj Univ., Saratov (Russian Federation)

Description

A study has been made of the effect of positive magnetoresistance in a ferromagnetic Eu1-xSmxO semiconductor. The effect is not characteristic of this class of materials. The results indicate that the value of positive magnetoresistance is determined by carrier scattering by magnetic moments of disordered regions, which take place thanks to the uneven distribution of defects in a disordered-structure system (a quasi-amorphous film)

Additional details

Additional titles

Original title (Russian)
Эффект положительного магнитосопротивления в пленках ферромагнитного полупроводника Еу

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
31
Journal Issue
5
Journal Page Range
p. 626-628
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
30001562
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRIC FIELDS; EUROPIUM OXIDES; FILMS; MAGNETIC FIELDS; MAGNETORESISTANCE; SAMARIUM OXIDES; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K
Descriptors DEC
CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EUROPIUM COMPOUNDS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SAMARIUM COMPOUNDS; TEMPERATURE RANGE

Optional Information

Notes
6 refs., 4 figs.