Published January 13, 2014
| Version v1
Journal article
Unusual thermopower of inhomogeneous graphene grown by chemical vapor deposition
Creators
- 1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-412 96 Gothenburg (Sweden)
- 2. Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)
- 3. Department of Materials Science and Engineering, Seoul National University, Seoul 151-747 (Korea, Republic of)
Description
We report on thermopower (TEP) and resistance measurements of inhomogeneous graphene grown by chemical vapor deposition (CVD). Unlike the conventional resistance of pristine graphene, the gate-dependent TEP shows a large electron-hole asymmetry. This can be accounted for by inhomogeneity of the CVD-graphene where individual graphene regions contribute with different TEPs. At the high magnetic field and low temperature, the TEP has large fluctuations near the Dirac point associated with the disorder in the CVD-graphene. TEP measurements reveal additional characteristics of CVD-graphene, which are difficult to obtain from the measurement of resistance alone
Additional details
Identifiers
- DOI
- 10.1063/1.4861745;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 2
- Journal Page Range
- p. 021902-021902.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45097166
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; GRAPHENE; MAGNETIC FIELDS
- Descriptors DEC
- CARBON; CHEMICAL COATING; DEPOSITION; ELEMENTS; NONMETALS; SURFACE COATING
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC