Defect formation in 4H-SiC single crystal grown on the prismatic seeds

The defect structure of 4H silicon carbide single crystals grown by PVT method on three prismatic seeds (10-10), (11-20) and (8.3.-11.0) is considered. The only defects existing in the grown ingots are stacking faults and basal plane dislocations. The type of stacking fault is studied. The dependence of stacking fault morphology on the seed orientation is analyzed