The use of silicides for interconnect metallization and the elimination of contact-degradation in shallow-junction silicon devices

By the end of this decade the local micro-electronics industry will be using lateral contact dimensions of less than 2 microns and submicron junction depths. The expertise and experience gained in this project is indispensable to the implementation of such technologies as silicides will have to be used for the metallisation process. The project is thus envisaged as a direct contribution to the development of VLSI metallisation expertise in mos bipolar technology. The main purpose of this project is to carry out a detailed studie of silicide formation in order to provide the necessary scientific know-how and technological backup for the successful implimentation of silicides by the South African micro-electronics industry