Published May 2000
| Version v1
Journal article
Effect of Ba+ ion implantation on electronic characteristics of SiO2 dielectric films
- 1. Tashkent State Technical Univ., Tashkent (Uzbekistan)
Description
In this work the influence of ion implantation followed by annealing on energy band parameters, the emission properties and the depth (λ) of origin of true secondary electrons(TSE) was investigated. The ion implantation combined with annealing results in the increasing of both the Sio2 band gap and the depth of TSE origin. The results obtained are discussed and analyzed. (author)
Additional details
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 2
- Journal Issue
- 1
- Journal Page Range
- p. 38-42
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 32007794
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; AUGER ELECTRON SPECTROSCOPY; BARIUM IONS; DIELECTRIC MATERIALS; ELECTRON EMISSION; ELECTRONIC STRUCTURE; ENERGY GAP; ION BEAMS; ION IMPLANTATION; KEV RANGE; PHYSICAL RADIATION EFFECTS; SECONDARY EMISSION; SILICON OXIDES; THIN FILMS
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHARGED PARTICLES; ELECTRON SPECTROSCOPY; EMISSION; ENERGY RANGE; FILMS; HEAT TREATMENTS; IONS; MATERIALS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; SILICON COMPOUNDS; SPECTROSCOPY
Optional Information
- Notes
- 6 refs., 4 figs., 2 tabs.