Published May 1996 | Version v1
Journal article

Ion implanted Bragg endash Fresnel lens

  • 1. European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex (France)
  • 2. Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District (Russia)

Description

We have investigated the feasibility of widening the bandpath of the Bragg endash Fresnel optical element through the use of ion implantation. The focusing properties of Bragg endash Fresnel lenses (BFLs) were studied as a function of the implantation dose and energy. An enhancement of the focus intensity of up to 15% was found, which is less than expected. Due to the complicated scattering of the low energy ions inside the micrometer- and submicrometer-sized crystal features that make up the BFL relief, the implantation technology destroys the peripheral zones of the BFL more than it increases the intensity in the focus. Nevertheless we believe that high energy implantation can be successfully used to modify the BFL reflectivity, especially in the case of nearly backscattering reflection. copyright 1996 American Institute of Physics

Additional details

Publishing Information

Journal Title
Review of Scientific Instruments
Journal Volume
67
Journal Issue
5
Journal Page Range
p. 1733-1736.
ISSN
0034-6748
CODEN
RSINAK