Published July 31, 2005
| Version v1
Report
PERFORMANCE STUDIES OF CdZnTe DETECTOR BY USING A PULSE SHAPE ANALYSIS
Description
Pulse shape analysis is proved to be a powerful tool to characterize the performance of CdZnTe devices and understand their operating principles. It allows one to investigate the device configurations, electron transport properties, effects governing charge collection, electric-field distributions, signal charge formation, etc. This work describes an application of different techniques based on the pulse shape measurements to characterize pixel, coplanar-grid, and virtual Frisch-grid devices and understand the electronic properties of CZT material provided by different vendors. We report new results that may explain the performance limits of these devices
Availability note (English)
Available from PURL: https://www.osti.gov/servlets/purl/15020050-9U4wkf/Additional details
Identifiers
Publishing Information
- Imprint Pagination
- 12 p.
- Report number
- BNL--74873-2005-CP
Conference
- Title
- 50. ANNUAL SPIE MEETING
- Dates
- 31 Jul - 4 Aug 2005
- Place
- SAN DIEGO, CA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 36113017
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Non-conventional Literature
- Descriptors DEI
- CADMIUM TELLURIDES; CDTE SEMICONDUCTOR DETECTORS; CHARGE COLLECTION; ELECTRICAL PROPERTIES; PERFORMANCE; PULSE SHAPERS; ZINC TELLURIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTRONIC CIRCUITS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; PULSE CIRCUITS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SIGNAL CONDITIONERS; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Contract/Grant/Project number
- YN0100000; AC--02-98CH10886
- Funding organization
- DOE/NNSA (United States)