Published July 31, 2005 | Version v1
Report

PERFORMANCE STUDIES OF CdZnTe DETECTOR BY USING A PULSE SHAPE ANALYSIS

Description

Pulse shape analysis is proved to be a powerful tool to characterize the performance of CdZnTe devices and understand their operating principles. It allows one to investigate the device configurations, electron transport properties, effects governing charge collection, electric-field distributions, signal charge formation, etc. This work describes an application of different techniques based on the pulse shape measurements to characterize pixel, coplanar-grid, and virtual Frisch-grid devices and understand the electronic properties of CZT material provided by different vendors. We report new results that may explain the performance limits of these devices

Availability note (English)

Available from PURL: https://www.osti.gov/servlets/purl/15020050-9U4wkf/

Additional details

Publishing Information

Imprint Pagination
12 p.
Report number
BNL--74873-2005-CP

Conference

Title
50. ANNUAL SPIE MEETING
Dates
31 Jul - 4 Aug 2005
Place
SAN DIEGO, CA (United States)

Optional Information

Contract/Grant/Project number
YN0100000; AC--02-98CH10886
Funding organization
DOE/NNSA (United States)