Effect of intense pulsed low energy ionic fluxes on GaAs

The effect of GaAs compensation under the action of intense low-energy ionic fluxes has been studied. It has been shown that compensation at irradiation temperatures of 350-500 deg C is associated with the migration of primary radiation-induced defects to GaAs depth and with the formation of complicated complexes under non-linear conditions in respect to irradiation intensity. A process phenomenological model has been suggested that implies accumulation of the divacancy-donor atom complexes through an intermediate short-lived state. The vacancy diffusion length in GaAs and characteristics of the intermediate complex have been found from comparison with the experiment