Enhanced performance of perovskite solar cells using p-type doped PFB:F4TCNQ composite as hole transport layer

Conjugated polymers have been widely used as hole transport materials (HTM) in the preparation of mesoscopic perovskite solar cells (PSCs). In this work, we employed p-type doped conducting polymer known as poly(9,9-dioctylfluorene-co-bis-N,N-(-4-butyl phenyl)-bis-N,N-phenyl-1,4-phenylenediamine) (PFB) as a hole transport material (HTM) in perovskite based solar cell. The effect of dopant concentration on the optical and electrical properties of PEB was investigated to optimize the electrical properties of the material for the best function of the solar cell. The highest power conversion efficiency of mesoscopic perovskite solar cells (PSCs), fabricated in this investigation, was found to be 14.04% which is 57% higher than that of pristine PFB hole transport layer. The UV–Vis absorption and Raman spectroscopy measurements confirm the occurrence of oxidation in a p-type doped PFB hole transport layer. This is attributed to the transfer of electrons from the highest occupied molecular orbital (HOMO) of PEB to the lowest unoccupied molecular orbital (LUMO) of F4TCNQ. The solar cells produced using p-type doped PFB:F4TCNQ composite not only improves device performances but also shows superior long-term stability. The optical, morphological and electrical properties of the doped composite PFB: F4TCNQ and newly fabricated devices are presented and discussed in this paper.