Published May 19, 2008 | Version v1
Journal article Metadata-only

Effects of hydrogen implantation temperature on InP surface blistering

Creators

  • 1. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States)
  • 2. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  • 3. MATIS-CNR-INFM and Dipartimento di Fisica ed Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy)
  • 4. Analog and Mixed-Signal Technologies, Freescale Semiconductor Inc., Tempe, Arizona 85284 (United States)

Description

We have investigated the effects of hydrogen implantation temperature on the ion-cut process of InP by examining the correlation between surface blistering and the ion induced damage, hydrogen distribution, and strain. Using Rutherford backscattering spectrometry, elastic recoil detection, and x-ray diffraction, it was found that both the point defects induced by the hydrogen implantation and the in-plane compressive stress were necessary for hydrogen trapping and H-platelet nucleation and growth. The control of implantation temperature is crucial for creating sufficient defects and strain to induce surface blistering or layer exfoliation

Additional details

Identifiers

DOI
10.1063/1.2926682;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
92
Journal Issue
20
Journal Page Range
p. 202107-202107.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39112224
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COMPRESSION STRENGTH; CRYSTAL GROWTH; HYDROGEN; HYDROGEN IONS; INDIUM PHOSPHIDES; ION IMPLANTATION; LAYERS; NUCLEATION; POINT DEFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; X-RAY DIFFRACTION
Descriptors DEC
CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; INDIUM COMPOUNDS; IONS; MATERIALS; MECHANICAL PROPERTIES; NONMETALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SCATTERING; SPECTROSCOPY

Optional Information

Notes
(c) 2008 American Institute of Physics